CdS-CdSe液晶光阀光电特性分析

对CdS－CdSe液晶光阀的结构及特性进行了分析，对其性能参数进行了测试，此光阀能较好地应用于大屏幕投影显示系统中。     

自旋阀中的各向异性磁电阻效应

采用平面霍尔效应测量方法，对Ta(8nm)/NiFe(7nm)/Cu(24nm)/NiFe(44nm)/FeMn(14nm)/Ta(6nm)自旋阀多层膜进行了研究.结果表明，在样品中存在着自由层和被钉扎层之间的各向异性磁电阻的“混合”效应.与通常所采用的磁电阻测量方法相结合，平面霍尔效应的测 量可以给出自旋阀中各向异性磁电阻以及自由层和被钉扎层的磁矩随外场变化的更多信息. 关键词： 自旋阀 各向异性磁电阻 平面霍尔效应     

高速水流中旋涡空化所引起的空蚀和振动

为了研究旋涡空化所引起的空蚀和振动观象以及二者的关系,采用高速摄影的方法,观察了发生在射流放水阀山部的空化形态。采用快速富里叶变换（FFT）分析了空化所引起的振动。采用失重法,进行了空蚀实验。结果表明,旋涡空化能引起严重的空蚀和剧烈的振动。在旋涡空化发展的个同阶段,其所导致的振动和空蚀呈观了个同的特性。当Sσ>0.74时,随空化数的变化,振动和空蚀呈现了相同的变化趋势,但是,在0.50<σ<0.74的范围内,振动和空蚀呈现了相反的变化趋势。这是由于水流中空化旋涡的数目和形态随空化数的变化,以及旋涡空化引起振动和空蚀的机理不同所造成的。     

Bi对自旋阀钉扎场的影响及机理

实验发现将Bi插入自旋阀多层膜TaNiFeCuBi(x)NiFeFeMn中可以显著地提高自旋阀的钉扎场Hex.采用XPS对Cu,Bi元素的分布情况进行了研究,发现Bi的插入明显抑制了Cu原子在自旋阀的制备过程中在NiFeFeMn界面的偏聚.进一步研究表明:自旋阀钉扎层NiFeFeMn界面中,Cu原子的存在是导致自旋阀Hex小于TaNiFeFeMn多层膜Hex的主要原因. 关键词： 自旋阀 钉扎场 交换各向异性 表面活化剂     

液晶光阀图像输出特性的研究

根据液晶光阀工作曲线，探讨了图像的各种输出特性，如图像实时反转、图像边界增强等。     

液晶光阀用于光学傅里叶变换

结合我校开设的液晶光阀实验，介绍了几个典型的静态傅里叶变换实验内容，以液晶光阀在计算全息扫描器中的应用为例，对其在动态傅里叶变换中的应用进行了讨论。     

汽轮机调节阀内流动特性的试验研究

介绍了最常用的G-I型调节阀内的动态压力测量方法及其各关键部位的流动特性,尤其是引起不稳定流动的主要因素即气流的压力脉动特性。测试结果表明,调节阀处于不稳定工作状态即阀杆振动工况取决于脉动压力与阀杆固频率是否同频,并非其脉动压力值大小;调整阀杆固有频率是消除调节阀振动最简便和有效的方法。     

The effect of annealing on the MR and exchange bias characteristics in dual spin valve with nano-oxide layer

We investigated magnetoresistance (MR) and exchange bias properties by annealing in the dual spin valve (SV) with nano-oxide layer (NOL). By analyzing effects of NOL in top and bottom pinned simple SVs, MR enhancement effect of NOL inserted in the bottom pinned layer was higher than that of NOL in the top pinned layer with annealing. By the enhanced specular scattering of electrons by NOL, the MR ratio of dual SV with NOL was increased to 15.5–15.9% with an annealing of 200–250°C. Exchange coupling constant J_ex was improved rapidly as 0.13–0.16 erg/cm² by annealing in the bottom pinned layer, whereas the effect of annealing was not large in the top pinned layer with J_ex of about 0.09–0.116 erg/cm².     

Photoelectric properties of pure and aluminium doped CdS films

Photoelectric properties of pure and Al doped vacuum deposited CdS films have been studied to explore the possibility of their application in photoactivated liquid crystal light valves. The effect of heat treatment in oxygen atmosphere, rate of deposition and the extent of Al doping, etc. on the resistivity, photo-response spectral characteristics, rise and decay time of photo-current, etc. have been investigated. It has been found that in contrast to pure CdS films, the properties of Al-doped films significantly depend on both the rate of deposition and the extent of Al doping. The dark resistivity in all cases was found to increase with heat treatment in oxygen. Unlike pure CdS films, Al doped films show photo-conductivity which is enhanced by heat treatment. Al doped films deposited at higher rates show better photo response even at lower light levels. At various light levels the rise and decay time of Al-doped films were found to be fairly constant and lower than that for pure CdS films. All these properties have been explained in terms of the presence of trapping levels due to doping. These trapping levels are also indicated by TSC, optical absorption and EPR studies.